| 1 |
Semiconductors
Diodes |
Diode symbols;
Diode characteristics and properties;
Series and parallel diodes;
Main properties and usage of silicon controlled rectifiers (thyristors), light emitting diodes, photoconductor diodes, varistors, rectifier diodes;
Functional testing of diodes |
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| 2 |
Semiconductors
Diodes |
Diode symbols;
Diode characteristics and properties;
Series and parallel diodes;
Main properties and usage of silicon controlled rectifiers (thyristors), light emitting diodes, photoconductor diodes, varistors, rectifier diodes;
Functional testing of diodes |
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| 3 |
Semiconductors
Diodes |
Diode symbols;
Diode characteristics and properties;
Series and parallel diodes;
Main properties and usage of silicon controlled rectifiers (thyristors), light emitting diodes, photoconductor diodes, varistors, rectifier diodes;
Functional testing of diodes |
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| 4 |
Semiconductors
Diodes |
Diode symbols;
Diode characteristics and properties;
Series and parallel diodes;
Main properties and usage of silicon controlled rectifiers (thyristors), light emitting diodes, photoconductor diodes, varistors, rectifier diodes;
Functional testing of diodes |
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| 5 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 6 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 7 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 8 |
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MID-TERM EXAM |
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| 9 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 10 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 11 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 12 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
- |
| 13 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
- |
| 14 |
Semiconductors
Diodes |
Materials, electron configuration, electrical properties;
P and N type materials: effects of impurities on conduction, majority and minority characters;
PN junction in semiconductor, potential development across the PN junction under unbiased, straight biased and reverse biased conditions;
Diode parameters: Reverse peak voltage, maximum direct current, temperature, frequency, leakage current, power loss;
Operation and function of diodes in the following circuits: Breaker circuits, clamp circuits, full and half wave rectifiers, bridge rectifiers/rectifiers, voltage doublers and trippers;
Detailed operation and characteristic features of the following assemblies: Silicon controlled rectifier (thyristor), light emitting diode, Schottky diode, photoconductor diode, varactor diode, varistor, rectifier diodes, Zener diode |
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| 15 |
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FINAL EXAM |
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| 16 |
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FINAL EXAM |
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| 17 |
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FINAL EXAM |
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