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Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes |
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| 2 |
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Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes |
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| 3 |
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Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes |
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| 4 |
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Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes |
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| 5 |
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Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes |
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| 6 |
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Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes |
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| 7 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 8 |
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MID-TERM EXAM |
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| 9 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 10 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 11 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 12 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 13 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 14 |
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**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.** |
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| 15 |
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GENERAL REVIEW |
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| 16 |
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FINAL EXAM |
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| 17 |
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FINAL EXAM |
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