TEMEL ELEKTRONİK LAB PROGRAMME COURSE DESCRIPTION

Code	Name of the Course Unit	Semester	In-Class Hours (T+P)	Credit	ECTS Credit
GMY237	TEMEL ELEKTRONİK LAB	3	4	2	3

GENERAL INFORMATION
Language of Instruction :	Turkish
Level of the Course Unit :	BACHELOR'S DEGREE, TYY: + 6.Level, EQF-LLL: 6.Level, QF-EHEA: First Cycle
Type of the Course :	Compulsory
Mode of Delivery of the Course Unit	-
Coordinator of the Course Unit	Assist.Prof. SİNEM GÜRKAN
Instructor(s) of the Course Unit	Assist.Prof. KANAN BABANLI
Course Prerequisite	No

OBJECTIVES AND CONTENTS
Objectives of the Course Unit:	The aim of this course is to introduce students to the production and operational characteristics of various semiconductor electronic devices, along with their electrical properties. Additionally, it seeks to equip students with the skills necessary to analyze and simulate basic electronic circuits that utilize these components.
Contents of the Course Unit:	Fundamental Electronics is one of the core courses of the program. The materials introduced in this course will be applied in other technical courses. A strong understanding of the topics is directly proportional to success in mathematics and direct current circuit analysis courses.

KEY LEARNING OUTCOMES OF THE COURSE UNIT (On successful completion of this course unit, students/learners will or will be able to)
Defines the applications of electronics in industry.
Interprets information regarding electronic components and devices and their roles in electronic circuits.
Applies basic electronic circuit analysis methods.
Utilizes instruments and devices in the electronics laboratory, as well as electronic circuit simulation software.
Analyzes basic electronic circuits.

WEEKLY COURSE CONTENTS AND STUDY MATERIALS FOR PRELIMINARY & FURTHER STUDY
Week	Preparatory	Topics(Subjects)	Method
1	-	Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes	-
2	-	Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes	-
3	-	Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes	-
4	-	Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes	-
5	-	Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes	-
6	-	Diode Symbols; Characteristics and Properties of Diodes; Series and Parallel Diodes; Key Characteristics and Applications of Silicon-Controlled Rectifiers (SCRs), Light Emitting Diodes (LEDs), Photoconductive Diodes, Varistors, and Rectifier Diodes; Functional Testing of Diodes	-
7	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
8	-	MID-TERM EXAM	-
9	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
10	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
11	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
12	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
13	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
14	-	**Materials, Electron Configuration, Electrical Properties; P-type and N-type Materials: Effects of Impurities on Conduction, Majority and Minority Carriers; PN Junction in Semiconductors, Potential Development across the PN Junction under Unbiased, Forward-biased, and Reverse-biased Conditions; Diode Parameters: Reverse Peak Voltage, Maximum Forward Current, Temperature, Frequency, Leakage Current, Power Loss; Operation and Function of Diodes in the Following Circuits: Clipping Circuits, Clamping Circuits, Full and Half-Wave Rectifiers, Bridge Rectifiers/Converters, Voltage Doublers and Triplers; Detailed Operation and Characteristic Properties of the Following Devices: Silicon-Controlled Rectifier (SCR), Light Emitting Diode (LED), Schottky Diode, Photoconductive Diode, Varactor Diode, Varistor, Rectifier Diodes, Zener Diode.**	-
15	-	GENERAL REVIEW	-
16	-	FINAL EXAM	-
17	-	FINAL EXAM	-

SOURCE MATERIALS & RECOMMENDED READING
EASA Part 66 - Modul3 - Elektrik Temelleri Temel Elektrik Elektronik I - Ders Notları Megep Modülleri Electronical Fundamentals, Electronic Fundamentals EASA Part-66 Module-3 Module-4

ASSESSMENT
Assessment & Grading of In-Term Activities	Number of Activities	Degree of Contribution (%)	Description

Level of Contribution
0	1	2	3	4	5

KNOWLEDGE
Theoretical
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Define the basic concepts of aeronautical standards and rules. (Bloom 1)				3

KNOWLEDGE
Factual
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Organize teamwork during the collection, interpretation, announcement and application of data related to the field. (Bloom 6)			2

SKILLS
Cognitive
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Perform theoretical and practical knowledge related to his/her field in business life using analytical methods and modeling techniques. (Bloom 4)						5
2	Use maintenance manuals and other sources of information in business life to obtain information about the field. (Bloom3)					4
3	Determine the actualities of all technical and administrative documents related with the field. (Bloom 1)				3
4	Perform theoretical and practical knowledge related to his/her field in business life using analytical methods and modeling techniques. (Bloom 4)				3

SKILLS
Practical
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Use computer software, information and communication technologies at the level required by the field. (Bloom 3)					4
2	Interpret the sketches, scheme, graphics that describe the subject. (Bloom 2)	0

OCCUPATIONAL
Autonomy & Responsibility
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Develop solutions for problems faced during application. (Bloom 6)			2

OCCUPATIONAL
Learning to Learn
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Determine the learning requirements related with his/her field. (Bloom 3)			2
2	Use the lifelong learning principles in occupational development. (Bloom 3)				3

OCCUPATIONAL
Communication & Social
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Apply the technical drawing knowledge effectively in business life. (Bloom 3)						5
2	By informing the relevant persons and institutions about the related field; state his / her thoughts and suggestions for solutions in the field.(Bloom 1)			2
3	Debate his/her ideas and solution suggestions with experts by supporting them with quantitative and qualitative data. (Bloom 2)				3
4	Participate in training related to the field at international level. (Bloom 3)		1
5	Organize activities for the professional development of employees under his/her responsibility. (Bloom 6).				3

OCCUPATIONAL
Occupational and/or Vocational
	Programme Learning Outcomes	Level of Contribution
		0	1	2	3	4	5
1	Use the knowledge and skills obtained during undergraduate education in work life. (Bloom 3)					4
2	Solve the problems encountered in his/her field. (Bloom 3)	0
3	Apply the necessary culture of behavior in the areas of quality management and processes and environmental protection and occupational safety (Bloom 3)		1
4	Locate the awareness of safety factor to himself and to the team. (Bloom 1)				3

WORKLOAD & ECTS CREDITS OF THE COURSE UNIT
Workload for Learning & Teaching Activities
Type of the Learning Activites	Learning Activities (# of week)	Duration (hours, h)	Workload (h)
Lecture & In-Class Activities	0	0	0
Preliminary & Further Study	0	0	0
Land Surveying	0	0	0
Group Work	0	0	0
Laboratory	0	0	0
Reading	0	0	0
Assignment (Homework)	0	0	0
Project Work	0	0	0
Seminar	0	0	0
Internship	0	0	0
Technical Visit	0	0	0
Web Based Learning	0	0	0
Implementation/Application/Practice	0	0	0
Practice at a workplace	0	0	0
Occupational Activity	0	0	0
Social Activity	0	0	0
Thesis Work	0	0	0
Field Study	0	0	0
Report Writing	0	0	0
Final Exam	0	0	0
Preparation for the Final Exam	0	0	0
Mid-Term Exam	0	0	0
Preparation for the Mid-Term Exam	0	0	0
Short Exam	0	0	0
Preparation for the Short Exam	0	0	0
TOTAL	0	0	0